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    Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

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    Type
    Article
    Authors
    Addou, Rafik
    McDonnell, Stephen
    Barrera, Diego
    Guo, Zaibing
    Azcatl, Angelica
    Wang, Jian
    Zhu, Hui
    Hinkle, Christopher L.
    Quevedo-Lopez, Manuel A. cc
    Alshareef, Husam N. cc
    Colombo, Luigi
    Hsu, Julia W P
    Wallace, Robert M.
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Physical Science and Engineering (PSE) Division
    Date
    2015-08-27
    Online Publication Date
    2015-08-27
    Print Publication Date
    2015-09-22
    Permanent link to this record
    http://hdl.handle.net/10754/594198
    
    Metadata
    Show full item record
    Abstract
    Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.
    Citation
    Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, et al. (2015) Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces . ACS Nano 9: 9124–9133. Available: http://dx.doi.org/10.1021/acsnano.5b03309.
    Sponsors
    Consejo Nacional de Ciencia y Tecnología[NL-2010-C33-149216]
    Division of Electrical, Communications and Cyber Systems[ECCS-1407765]
    Semiconductor Research Corporation
    Defense Advanced Research Projects Agency
    Microelectronics Advanced Research Corporation
    Texas Instruments Distinguished Chair in Nanoelectronics, University of Texas at Dallas
    Center for Low Energy Systems Technology, University of Notre Dame
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Nano
    DOI
    10.1021/acsnano.5b03309
    PubMed ID
    26301428
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsnano.5b03309
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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