GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Permanent link to this recordhttp://hdl.handle.net/10754/594178
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AbstractNanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
CitationHsiao Y-H, Tsai M-L, He J-H (2015) GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management. IEEE Trans on Ind Applicat 51: 1277–1283. Available: http://dx.doi.org/10.1109/tia.2014.2360984.
SponsorsThis work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.