Show simple item record

dc.contributor.authorYuan, Zhongcheng*
dc.contributor.authorWu, Zhongwei*
dc.contributor.authorBai, Sai*
dc.contributor.authorCui, Wei*
dc.contributor.authorLiu, Jie*
dc.contributor.authorSong, Tao*
dc.contributor.authorSun, Baoquan*
dc.date.accessioned2016-01-19T13:21:10Zen
dc.date.available2016-01-19T13:21:10Zen
dc.date.issued2015-11en
dc.identifier.citationYuan Z, Wu Z, Bai S, Cui W, Liu J, et al. (2015) Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics. Organic Electronics 26: 327–333. Available: http://dx.doi.org/10.1016/j.orgel.2015.07.005.en
dc.identifier.issn1566-1199en
dc.identifier.doi10.1016/j.orgel.2015.07.005en
dc.identifier.urihttp://hdl.handle.net/10754/594082en
dc.description.abstractAbstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.en
dc.description.sponsorshipNational Natural Science Foundation of China[61176057, 91123005, 61211130358]en
dc.description.sponsorshipNational Basic Research Program of China[2012CB932402]en
dc.publisherElsevier BVen
dc.subjectBi<inf>2</inf>Se<inf>3</inf> nanoplatesen
dc.subjectHole transporting layersen
dc.subjectOrganic photovoltaicsen
dc.subjectStabilityen
dc.subjectWork functionen
dc.titleLayered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaicsen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center (KSC)*
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
dc.identifier.journalOrganic Electronicsen
dc.contributor.institutionJiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, China*
kaust.authorBai, Sai*


This item appears in the following Collection(s)

Show simple item record