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dc.contributor.authorYuan, Zhongcheng
dc.contributor.authorWu, Zhongwei
dc.contributor.authorBai, Sai
dc.contributor.authorCui, Wei
dc.contributor.authorLiu, Jie
dc.contributor.authorSong, Tao
dc.contributor.authorSun, Baoquan
dc.date.accessioned2016-01-19T13:21:10Z
dc.date.available2016-01-19T13:21:10Z
dc.date.issued2015-11
dc.identifier.citationYuan Z, Wu Z, Bai S, Cui W, Liu J, et al. (2015) Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics. Organic Electronics 26: 327–333. Available: http://dx.doi.org/10.1016/j.orgel.2015.07.005.
dc.identifier.issn1566-1199
dc.identifier.doi10.1016/j.orgel.2015.07.005
dc.identifier.urihttp://hdl.handle.net/10754/594082
dc.description.abstractAbstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.
dc.description.sponsorshipNational Natural Science Foundation of China[61176057, 91123005, 61211130358]
dc.description.sponsorshipNational Basic Research Program of China[2012CB932402]
dc.publisherElsevier BV
dc.subjectBi<inf>2</inf>Se<inf>3</inf> nanoplates
dc.subjectHole transporting layers
dc.subjectOrganic photovoltaics
dc.subjectStability
dc.subjectWork function
dc.titleLayered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalOrganic Electronics
dc.contributor.institutionJiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, China
kaust.personBai, Sai


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