Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics
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AbstractAbstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.
CitationYuan Z, Wu Z, Bai S, Cui W, Liu J, et al. (2015) Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics. Organic Electronics 26: 327–333. Available: http://dx.doi.org/10.1016/j.orgel.2015.07.005.
SponsorsNational Natural Science Foundation of China[61176057, 91123005, 61211130358]
National Basic Research Program of China[2012CB932402]