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    The Silicon:Colloidal Quantum Dot Heterojunction

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    Name:
    The Silicon Colloidal Quantum1.pdf
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    Description:
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    Type
    Article
    Authors
    Masala, Silvia
    Adinolfi, Valerio
    Sun, Jon Paul
    Del Gobbo, Silvano
    Voznyy, Oleksandr cc
    Kramer, Illan J. cc
    Hill, Ian G.
    Sargent, Edward H. cc
    KAUST Department
    KAUST Solar Center (KSC)
    Physical Science and Engineering (PSE) Division
    Date
    2015-10-13
    Online Publication Date
    2015-10-13
    Print Publication Date
    2015-12
    Embargo End Date
    2016-10-13
    Permanent link to this record
    http://hdl.handle.net/10754/594072
    
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    Abstract
    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Citation
    Masala S, Adinolfi V, Sun J-P, Gobbo SD, Voznyy O, et al. (2015) The Silicon:Colloidal Quantum Dot Heterojunction. Advanced Materials 27: 7445–7450. Available: http://dx.doi.org/10.1002/adma.201503212.
    Publisher
    Wiley
    Journal
    Advanced Materials
    DOI
    10.1002/adma.201503212
    PubMed ID
    26460732
    ae974a485f413a2113503eed53cd6c53
    10.1002/adma.201503212
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; KAUST Solar Center (KSC)

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