Show simple item record

dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorWei, Nini
dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorJanjua, Bilal
dc.contributor.authorShen, Chao
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2016-01-13T09:36:59Z
dc.date.available2016-01-13T09:36:59Z
dc.date.issued2016-01-14
dc.identifier.citationFacile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters 2016 Nano Letters
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid26745217
dc.identifier.doi10.1021/acs.nanolett.5b04190
dc.identifier.urihttp://hdl.handle.net/10754/593362
dc.description.abstractHigh-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acs.nanolett.5b04190
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.5b04190.
dc.titleFacile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.identifier.journalNano Letters
dc.eprint.versionPost-print
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhao, Chao
kaust.personNg, Tien Khee
kaust.personWei, Nini
kaust.personPrabaswara, Aditya
kaust.personAlias, Mohd Sharizal
kaust.personJanjua, Bilal
kaust.personShen, Chao
kaust.personOoi, Boon S.
refterms.dateFOA2017-01-08T00:00:00Z
dc.date.published-online2016-01-14
dc.date.published-print2016-02-10


Files in this item

Thumbnail
Name:
acs2Enanolett2E5b04190.pdf
Size:
4.370Mb
Format:
PDF
Description:
Accepted Manuscript

This item appears in the following Collection(s)

Show simple item record