Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters
Ng, Tien Khee
Alias, Mohd Sharizal
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Online Publication Date2016-01-14
Print Publication Date2016-02-10
Permanent link to this recordhttp://hdl.handle.net/10754/593362
MetadataShow full item record
AbstractHigh-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.
CitationFacile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters 2016 Nano Letters
PublisherAmerican Chemical Society (ACS)
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