Single-Readout High-Density Memristor Crossbar
dc.contributor.author | Zidan, M. A. | |
dc.contributor.author | Omran, Hesham | |
dc.contributor.author | Naous, Rawan | |
dc.contributor.author | Salem, Ahmed Sultan | |
dc.contributor.author | Fahmy, H. A. H. | |
dc.contributor.author | Lu, W. D. | |
dc.contributor.author | Salama, Khaled N. | |
dc.date.accessioned | 2016-01-10T10:26:07Z | |
dc.date.available | 2016-01-10T10:26:07Z | |
dc.date.issued | 2016-01-07 | |
dc.identifier.citation | Single-Readout High-Density Memristor Crossbar 2016, 6:18863 Scientific Reports | |
dc.identifier.issn | 2045-2322 | |
dc.identifier.pmid | 26738564 | |
dc.identifier.doi | 10.1038/srep18863 | |
dc.identifier.uri | http://hdl.handle.net/10754/593181 | |
dc.description.abstract | High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the sneak-paths problem. The proposed methods require a single memory access per pixel for an array readout. Besides, the memristive crossbar consumes an order of magnitude less power than state-of-the-art readout techniques. | |
dc.language.iso | en | |
dc.publisher | Springer Nature | |
dc.relation.url | http://www.nature.com/articles/srep18863 | |
dc.rights | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | |
dc.title | Single-Readout High-Density Memristor Crossbar | |
dc.type | Article | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.identifier.journal | Scientific Reports | |
dc.eprint.version | Publisher's Version/PDF | |
dc.contributor.institution | Department of Electrical Engineering & Computer Science, University of Michigan, Ann Arbor, MI 48109, USA | |
dc.contributor.institution | Electronics and Communications Department, Faculty of Engineering, Cairo University, Giza 12316, Egypt | |
dc.contributor.affiliation | King Abdullah University of Science and Technology (KAUST) | |
kaust.person | Omran, Hesham | |
kaust.person | Naous, Rawan | |
kaust.person | Salem, Ahmed Sultan | |
kaust.person | Salama, Khaled N. | |
refterms.dateFOA | 2018-06-13T13:31:11Z | |
dc.date.published-online | 2016-01-07 | |
dc.date.published-print | 2016-05 |
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