Type
ArticleAuthors
Zidan, M. A.Omran, Hesham

Naous, Rawan

Salem, Ahmed Sultan
Fahmy, H. A. H.
Lu, W. D.
Salama, Khaled N.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2016-01-07Online Publication Date
2016-01-07Print Publication Date
2016-05Permanent link to this record
http://hdl.handle.net/10754/593181
Metadata
Show full item recordAbstract
High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the sneak-paths problem. The proposed methods require a single memory access per pixel for an array readout. Besides, the memristive crossbar consumes an order of magnitude less power than state-of-the-art readout techniques.Citation
Single-Readout High-Density Memristor Crossbar 2016, 6:18863 Scientific ReportsPublisher
Springer NatureJournal
Scientific ReportsPubMed ID
26738564Additional Links
http://www.nature.com/articles/srep18863ae974a485f413a2113503eed53cd6c53
10.1038/srep18863
Scopus Count
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