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dc.contributor.authorLi, Xiaohang
dc.contributor.authorXie, Hongen
dc.contributor.authorPonce, Fernando A.
dc.contributor.authorRyou, Jae-Hyun
dc.contributor.authorDetchprohm, Theeradetch
dc.contributor.authorDupuis, Russell D.
dc.date.accessioned2015-12-28T14:49:06Z
dc.date.available2015-12-28T14:49:06Z
dc.date.issued2015-12-14
dc.identifier.citationOnset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells 2015, 107 (24):241109 Applied Physics Letters
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4938136
dc.identifier.urihttp://hdl.handle.net/10754/592636
dc.description.abstractWe demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/24/10.1063/1.4938136
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleOnset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
dc.contributor.institutionDepartment of Physics, Arizona State University, Tempe, Arizona 85287, USA
dc.contributor.institutionDepartment of Physics, Arizona State University, Tempe, Arizona 85287, USA
dc.contributor.institutionDepartment of Mechanical Engineering, Materials Science and Engineering Program, and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, USA
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personLi, Xiaohang
refterms.dateFOA2018-06-13T12:38:34Z


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