Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
Ponce, Fernando A.
Dupuis, Russell D.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/592636
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AbstractWe demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).
CitationOnset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells 2015, 107 (24):241109 Applied Physics Letters
JournalApplied Physics Letters