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dc.contributor.authorHou, Zhipeng
dc.contributor.authorWang, Wenhong
dc.contributor.authorXu, Guizhou
dc.contributor.authorZhang, Xiaoming
dc.contributor.authorWei, Zhiyang
dc.contributor.authorShen, Shipeng
dc.contributor.authorLiu, Enke
dc.contributor.authorYao, Yuan
dc.contributor.authorChai, Yisheng
dc.contributor.authorSun, Young
dc.contributor.authorXi, Xuekui
dc.contributor.authorWang, Wenquan
dc.contributor.authorLiu, Zhongyuan
dc.contributor.authorWu, Guangheng
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-12-28T14:52:54Z
dc.date.available2015-12-28T14:52:54Z
dc.date.issued2015-12-18
dc.identifier.citationHigh electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi 2015, 92 (23) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.92.235134
dc.identifier.urihttp://hdl.handle.net/10754/592622
dc.description.abstractMaterials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.92.235134
dc.rightsArchived with thanks to Physical Review B
dc.titleHigh electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionState Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
dc.contributor.institutionCollege of Physics, Jilin University, Changchun 130023, China
dc.contributor.institutionState Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004, China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxividarXiv:1502.03523
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-13T17:29:24Z


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