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dc.contributor.authorWang, Ping
dc.contributor.authorYuan, Ying
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Xinqiang
dc.contributor.authorZheng, Xiantong
dc.contributor.authorRong, Xin
dc.contributor.authorWang, Tao
dc.contributor.authorSheng, Bowen
dc.contributor.authorWang, Qingxiao
dc.contributor.authorZhang, Yongqiang
dc.contributor.authorBian, Lifeng
dc.contributor.authorYang, Xue-Lin
dc.contributor.authorXu, Fu-Jun
dc.contributor.authorQin, Zhixin
dc.contributor.authorLi, Xin-Zheng
dc.contributor.authorZhang, Xixiang
dc.contributor.authorShen, Bo
dc.date.accessioned2015-12-27T13:20:51Z
dc.date.available2015-12-27T13:20:51Z
dc.date.issued2016-01-06
dc.identifier.citationLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires 2015 Nano Letters
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid26694227
dc.identifier.doi10.1021/acs.nanolett.5b04726
dc.identifier.urihttp://hdl.handle.net/10754/592601
dc.description.abstractLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acs.nanolett.5b04726
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.5b04726.
dc.titleLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Characterization
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano Letters
dc.eprint.versionPost-print
dc.contributor.institutionState Key Laboratory of Artificial Microstructure a nd Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
dc.contributor.institutionSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, P. R. China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhao, Chao
kaust.personWang, Qingxiao
kaust.personZhang, Xixiang
refterms.dateFOA2016-12-22T00:00:00Z
dc.date.published-online2016-01-06
dc.date.published-print2016-02-10


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