Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
KAUST DepartmentElectron Microscopy
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2016-01-06
Print Publication Date2016-02-10
Permanent link to this recordhttp://hdl.handle.net/10754/592601
MetadataShow full item record
AbstractLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
CitationLattice-polarity-driven epitaxy of hexagonal semiconductor nanowires 2015 Nano Letters
PublisherAmerican Chemical Society (ACS)
- Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy.
- Authors: Xu T, Sulerzycki J, Nys JP, Patriarche G, Grandidier B, Stiévenard D
- Issue date: 2011 Feb 2
- Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.
- Authors: Liu F, Wang T, Zhang Z, Shen T, Rong X, Sheng B, Yang L, Li D, Wei J, Sheng S, Li X, Chen Z, Tao R, Yuan Y, Yang X, Xu F, Zhang J, Liu K, Li XZ, Shen B, Wang X
- Issue date: 2022 Feb
- MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.
- Authors: E Y, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C, Luo Y
- Issue date: 2015 Dec
- The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates.
- Authors: Wu Y, Liu B, Li Z, Tao T, Xie Z, Wang K, Xiu X, Chen D, Lu H, Zhang R, Zheng Y
- Issue date: 2020 Jan 17
- Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method.
- Authors: Wang D, Zou ZQ
- Issue date: 2009 Jul 8