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dc.contributor.authorHsu, Wei-Ting
dc.contributor.authorChen, Yen-Lun
dc.contributor.authorChen, Chiang-Hsiao
dc.contributor.authorLiu, Pang-Shiuan
dc.contributor.authorHou, Tuo-Hung
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChang, Wen-Hao
dc.date.accessioned2015-12-14T09:54:48Z
dc.date.available2015-12-14T09:54:48Z
dc.date.issued2015-11-25
dc.identifier.citationOptically initialized robust valley-polarized holes in monolayer WSe2 2015, 6:8963 Nature Communications
dc.identifier.issn2041-1723
dc.identifier.pmid26603335
dc.identifier.doi10.1038/ncomms9963
dc.identifier.urihttp://hdl.handle.net/10754/583865
dc.description.abstractA robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (~10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.
dc.language.isoen
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms9963
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.titleOptically initialized robust valley-polarized holes in monolayer WSe2
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
dc.contributor.institutionDepartment of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan
dc.contributor.institutionDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-14T09:24:18Z
dc.date.published-online2015-11-25
dc.date.published-print2015-12


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