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    Optically initialized robust valley-polarized holes in monolayer WSe2

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    Type
    Article
    Authors
    Hsu, Wei-Ting
    Chen, Yen-Lun
    Chen, Chiang-Hsiao
    Liu, Pang-Shiuan
    Hou, Tuo-Hung
    Li, Lain-Jong cc
    Chang, Wen-Hao cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2015-11-25
    Online Publication Date
    2015-11-25
    Print Publication Date
    2015-12
    Permanent link to this record
    http://hdl.handle.net/10754/583865
    
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    Abstract
    A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (~10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.
    Citation
    Optically initialized robust valley-polarized holes in monolayer WSe2 2015, 6:8963 Nature Communications
    Publisher
    Springer Nature
    Journal
    Nature Communications
    DOI
    10.1038/ncomms9963
    PubMed ID
    26603335
    Additional Links
    http://www.nature.com/doifinder/10.1038/ncomms9963
    ae974a485f413a2113503eed53cd6c53
    10.1038/ncomms9963
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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