Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
Type
Conference PaperAuthors
Shen, Chao
Leonard, John
Pourhashemi, Arash
Oubei, Hassan M.

Alias, Mohd Sharizal

Ng, Tien Khee

Nakamura, Shuji
DenBaars, Steven P.
Speck, James S.
Alyamani, Ahmed Y.
Eldesouki, Munir M.
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
Date
2015-11-12Online Publication Date
2015-11-12Print Publication Date
2015-10Permanent link to this record
http://hdl.handle.net/10754/583288
Metadata
Show full item recordAbstract
In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.Citation
Chao Shen, Leonard, J., Pourhashemi, A., Oubei, H., Alias, M. S., Tien Khee Ng, … Ooi, B. S. (2015). Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate. 2015 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2015.7323637Conference/Event name
Photonics Conference (IPC), 2015ae974a485f413a2113503eed53cd6c53
10.1109/IPCon.2015.7323637