Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
Oubei, Hassan M.
Alias, Mohd Sharizal
Ng, Tien Khee
DenBaars, Steven P.
Speck, James S.
Alyamani, Ahmed Y.
Eldesouki, Munir M.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2015-11-12
Print Publication Date2015-10
Permanent link to this recordhttp://hdl.handle.net/10754/583288
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AbstractIn summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.
Conference/Event namePhotonics Conference (IPC), 2015