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dc.contributor.authorHanna, Amir
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorOmran, Hesham
dc.contributor.authorAlshareef, Sarah
dc.contributor.authorSalama, Khaled N.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-12-06T12:47:24Z
dc.date.available2015-12-06T12:47:24Z
dc.date.issued2015-12-04
dc.identifier.citationAmorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits 2015:1 IEEE Electron Device Letters
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.doi10.1109/LED.2015.2505613
dc.identifier.urihttp://hdl.handle.net/10754/583279
dc.description.abstractHigh performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7347334
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectDigital Circuits
dc.subjectNAND
dc.subjectThin Film Transistor
dc.subjectWavy channel
dc.subjectZin Oxide
dc.titleAmorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentSensors Lab
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Lab
dc.identifier.journalIEEE Electron Device Letters
dc.eprint.versionPost-print
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personHanna, Amir
kaust.personHussain, Aftab M.
kaust.personOmran, Hesham
kaust.personAlshareef, Sarah
kaust.personSalama, Khaled N.
kaust.personHussain, Muhammad Mustafa
refterms.dateFOA2018-06-13T11:55:42Z


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