III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

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III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon 2015, 107 (19):191107 Applied Physics Letters

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

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