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    III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

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    Type
    Article
    Authors
    Hazari, Arnab cc
    Aiello, Anthony
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    Bhattacharya, Pallab
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2015-11-12
    Online Publication Date
    2015-11-12
    Print Publication Date
    2015-11-09
    Permanent link to this record
    http://hdl.handle.net/10754/583075
    
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    Abstract
    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.
    Citation
    III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon 2015, 107 (19):191107 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4935614
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/107/19/10.1063/1.4935614
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4935614
    Scopus Count
    Collections
    Articles; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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