III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon
Type
ArticleDate
2015-11-12Online Publication Date
2015-11-12Print Publication Date
2015-11-09Permanent link to this record
http://hdl.handle.net/10754/583075
Metadata
Show full item recordAbstract
III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.Citation
III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon 2015, 107 (19):191107 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4935614