• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    1.4934355.pdf
    Size:
    1.292Mb
    Format:
    PDF
    Description:
    Main article
    Download
    Type
    Article
    Authors
    Alfaraj, Nasir cc
    Hussain, Aftab M. cc
    Torres Sevilla, Galo A.
    Ghoneim, Mohamed T. cc
    Rojas, Jhonathan Prieto cc
    Aljedaani, Abdulrahman B.
    Hussain, Muhammad Mustafa cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    High-Speed Fluids Imaging Laboratory
    Integrated Nanotechnology Lab
    Physical Science and Engineering (PSE) Division
    Date
    2015-10-26
    Permanent link to this record
    http://hdl.handle.net/10754/582486
    
    Metadata
    Show full item record
    Abstract
    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.
    Citation
    Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform 2015, 107 (17):174101 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4934355
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/107/17/10.1063/1.4934355
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4934355
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

    entitlement

     
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.