Electroforming free resistive switching memory in two-dimensional VOx nanosheets
KAUST DepartmentMaterials Science and Engineering Program
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AbstractWe report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.
CitationElectroforming free resistive switching memory in two-dimensional VOx nanosheets 2015, 107 (16):163106 Applied Physics Letters
JournalApplied Physics Letters