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dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorSevilla, Galo T.
dc.contributor.authorFahad, Hossain M.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-11-05T06:29:04Z
dc.date.available2015-11-05T06:29:04Z
dc.date.issued2015-08-12
dc.identifier.doi10.1109/DRC.2015.7175572
dc.identifier.urihttp://hdl.handle.net/10754/581769
dc.description.abstractSummary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7175572
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleOut-of-plane strain effect on silicon-based flexible FinFETs
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.identifier.journal2015 73rd Annual Device Research Conference (DRC)
dc.conference.date21-24 June 2015
dc.conference.name2015 73rd Annual Device Research Conference (DRC)
dc.conference.locationColumbus, OH
dc.eprint.versionPost-print
kaust.personGhoneim, Mohamed T.
kaust.personAlfaraj, Nasir
kaust.personSevilla, Galo T.
kaust.personFahad, Hossain M.
kaust.personHussain, Muhammad Mustafa
refterms.dateFOA2018-06-13T11:17:53Z
dc.date.published-online2015-08-12
dc.date.published-print2015-06


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