AuthorsGhoneim, Mohamed T.
Sevilla, Galo T.
Fahad, Hossain M.
Hussain, Muhammad Mustafa
KAUST DepartmentIntegrated Nanotechnology Lab
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AbstractSummary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Conference/Event name2015 73rd Annual Device Research Conference (DRC)