AuthorsGhoneim, Mohamed T.
Sevilla, Galo T.
Fahad, Hossain M.
Hussain, Muhammad Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Permanent link to this recordhttp://hdl.handle.net/10754/581769
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AbstractSummary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Conference/Event name2015 73rd Annual Device Research Conference (DRC)