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dc.contributor.authorKe, Jr-Jian
dc.contributor.authorNamura, Kyoko
dc.contributor.authorDuran Retamal, Jose Ramon
dc.contributor.authorHo, Chin-Hsiang
dc.contributor.authorMinamitake, Haruhiko
dc.contributor.authorWei, Tzu-Chiao
dc.contributor.authorTsai, Dung-Sheng
dc.contributor.authorLin, Chun-Ho
dc.contributor.authorSuzuki, Motofumi
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2015-11-05T06:11:23Z
dc.date.available2015-11-05T06:11:23Z
dc.date.issued2015-10-28
dc.identifier.citationSurface-Controlled Metal Oxide Resistive Memory 2015:1 IEEE Electron Device Letters
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.doi10.1109/LED.2015.2493343
dc.identifier.urihttp://hdl.handle.net/10754/581765
dc.description.abstractTo explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7310859
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleSurface-Controlled Metal Oxide Resistive Memory
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalIEEE Electron Device Letters
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Electrical Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
dc.contributor.institutionDepartment of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
dc.contributor.institutionElectrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personKe, Jr-Jian
kaust.personDuran Retamal, Jose Ramon
kaust.personWei, Tzu-Chiao
kaust.personLin, Chun-Ho
kaust.personHe, Jr-Hau
refterms.dateFOA2018-06-13T09:34:29Z
dc.date.published-online2015-10-28
dc.date.published-print2015-12


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