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dc.contributor.authorYang, Po-Kang
dc.contributor.authorHo, Chih-Hsiang
dc.contributor.authorLien, Der-Hsien
dc.contributor.authorDuran Retamal, Jose Ramon
dc.contributor.authorKang, Chen-Fang
dc.contributor.authorChen, Kuan-Ming
dc.contributor.authorHuang, Teng-Han
dc.contributor.authorYu, Yueh-Chung
dc.contributor.authorWu, Chih-I
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2015-10-28T13:43:25Z
dc.date.available2015-10-28T13:43:25Z
dc.date.issued2015-10-12
dc.identifier.citationA Fully Transparent Resistive Memory for Harsh Environments 2015, 5:15087 Scientific Reports
dc.identifier.issn2045-2322
dc.identifier.pmid26455819
dc.identifier.doi10.1038/srep15087
dc.identifier.urihttp://hdl.handle.net/10754/581360
dc.description.abstractA fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.
dc.language.isoen
dc.publisherNature Publishing Group
dc.relation.urlhttp://www.nature.com/articles/srep15087
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.titleA Fully Transparent Resistive Memory for Harsh Environments
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalScientific Reports
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
dc.contributor.institutionInstitute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 11529, Taiwan, ROC
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personYang, Po Kang
kaust.personLien, Der-Hsien
kaust.personDuran Retamal, Jose Ramon
kaust.personKang, Chen Fang
kaust.personHe, Jr-Hau
refterms.dateFOA2018-06-13T09:35:14Z


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