Type
ArticleAuthors
Yang, Po-KangHo, Chih-Hsiang
Lien, Der-Hsien

Duran Retamal, Jose Ramon
Kang, Chen-Fang
Chen, Kuan-Ming
Huang, Teng-Han
Yu, Yueh-Chung
Wu, Chih-I
He, Jr-Hau

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Date
2015-10-12Online Publication Date
2015-10-12Print Publication Date
2015-12Permanent link to this record
http://hdl.handle.net/10754/581360
Metadata
Show full item recordAbstract
A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.Citation
A Fully Transparent Resistive Memory for Harsh Environments 2015, 5:15087 Scientific ReportsPublisher
Springer NatureJournal
Scientific ReportsPubMed ID
26455819Additional Links
http://www.nature.com/articles/srep15087ae974a485f413a2113503eed53cd6c53
10.1038/srep15087
Scopus Count
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