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    InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

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    Type
    Article
    Authors
    Alhashim, Hala H. cc
    Khan, Mohammed Zahed Mustafa cc
    Majid, Mohammed Abdul cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Material Science and Engineering Program
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2015-10-16
    Permanent link to this record
    http://hdl.handle.net/10754/579910
    
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    Abstract
    We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060−1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green–yellow–orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.
    Citation
    InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants 2015, 54 (10):107107 Optical Engineering
    Publisher
    SPIE-Intl Soc Optical Eng
    Journal
    Optical Engineering
    DOI
    10.1117/1.OE.54.10.107107
    Additional Links
    http://opticalengineering.spiedigitallibrary.org/article.aspx?doi=10.1117/1.OE.54.10.107107
    ae974a485f413a2113503eed53cd6c53
    10.1117/1.OE.54.10.107107
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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