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dc.contributor.authorChroneos, A.
dc.contributor.authorSgourou, E. N.
dc.contributor.authorLondos, C. A.
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-10-18T14:38:28Z
dc.date.available2015-10-18T14:38:28Z
dc.date.issued2015-06-18
dc.identifier.citationOxygen defect processes in silicon and silicon germanium 2015, 2 (2):021306 Applied Physics Reviews
dc.identifier.issn1931-9401
dc.identifier.doi10.1063/1.4922251
dc.identifier.urihttp://hdl.handle.net/10754/579841
dc.description.abstractSilicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apr2/2/2/10.1063/1.4922251
dc.rightsArchived with thanks to Applied Physics Reviews
dc.titleOxygen defect processes in silicon and silicon germanium
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalApplied Physics Reviews
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionFaculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB, United Kingdom
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdom
dc.contributor.institutionSolid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens, Greece
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-13T12:25:28Z


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