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dc.contributor.authorVidal, Enrique Vilanova
dc.contributor.authorAlanazy, Mohammed H.
dc.contributor.authorIvanov, I.
dc.contributor.authorKosel, Jürgen
dc.date.accessioned2015-09-10T14:19:05Z
dc.date.available2015-09-10T14:19:05Z
dc.date.issued2015-05
dc.identifier.citationVidal, E. V., Mohammed, H., Ivanov, I., & Kosel, J. (2015). Magnetoresistance of cylindrical nanowires with artificial pinning site. 2015 IEEE Magnetics Conference (INTERMAG). doi:10.1109/intmag.2015.7157068
dc.identifier.doi10.1109/INTMAG.2015.7157068
dc.identifier.urihttp://hdl.handle.net/10754/577120
dc.description.abstractNew concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleMagnetoresistance of cylindrical nanowires with artificial pinning site
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journal2015 IEEE Magnetics Conference (INTERMAG)
kaust.personVidal, Enrique Vilanova
kaust.personKosel, Jürgen
kaust.personAlanazy, Mohammed H.
kaust.personIvanov, I.


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