Magnetoresistance of cylindrical nanowires with artificial pinning site
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/577120
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AbstractNew concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally . In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown .
CitationVidal, E. V., Mohammed, H., Ivanov, I., & Kosel, J. (2015). Magnetoresistance of cylindrical nanowires with artificial pinning site. 2015 IEEE Magnetics Conference (INTERMAG). doi:10.1109/intmag.2015.7157068