Large-area WSe2 electric double layer transistors on a plastic substrate
Type
ArticleKAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2015-04-27Online Publication Date
2015-04-27Print Publication Date
2015-06-01Permanent link to this record
http://hdl.handle.net/10754/577116
Metadata
Show full item recordAbstract
Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.Citation
Funahashi, K., Pu, J., Li, M.-Y., Li, L.-J., Iwasa, Y., & Takenobu, T. (2015). Large-area WSe2 electric double layer transistors on a plastic substrate. Japanese Journal of Applied Physics, 54(6S1), 06FF06. doi:10.7567/jjap.54.06ff06Publisher
IOP Publishingae974a485f413a2113503eed53cd6c53
10.7567/JJAP.54.06FF06