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    Large-area WSe2 electric double layer transistors on a plastic substrate

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    Type
    Article
    Authors
    Funahashi, Kazuma
    Pu, Jiang
    Li, Ming-yang cc
    Li, Lain-Jong cc
    Iwasa, Yoshihiro
    Takenobu, Taishi
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2015-04-27
    Online Publication Date
    2015-04-27
    Print Publication Date
    2015-06-01
    Permanent link to this record
    http://hdl.handle.net/10754/577116
    
    Metadata
    Show full item record
    Abstract
    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.
    Citation
    Funahashi, K., Pu, J., Li, M.-Y., Li, L.-J., Iwasa, Y., & Takenobu, T. (2015). Large-area WSe2 electric double layer transistors on a plastic substrate. Japanese Journal of Applied Physics, 54(6S1), 06FF06. doi:10.7567/jjap.54.06ff06
    Publisher
    IOP Publishing
    Journal
    Japanese Journal of Applied Physics
    DOI
    10.7567/JJAP.54.06FF06
    ae974a485f413a2113503eed53cd6c53
    10.7567/JJAP.54.06FF06
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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