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dc.contributor.authorPintossi, Chiara
dc.contributor.authorSalvinelli, Gabriele
dc.contributor.authorDrera, Giovanni
dc.contributor.authorPagliara, Stefania
dc.contributor.authorSangaletti, L.
dc.contributor.authorDel Gobbo, Silvano
dc.contributor.authorMorbidoni, Maurizio
dc.contributor.authorScarselli, Manuela A.
dc.contributor.authorDe Crescenzi, Maurizio
dc.contributor.authorCastrucci, Paola
dc.date.accessioned2015-09-10T09:27:23Z
dc.date.available2015-09-10T09:27:23Z
dc.date.issued2013-08-29
dc.identifier.issn19327447
dc.identifier.doi10.1021/jp404820k
dc.identifier.urihttp://hdl.handle.net/10754/577043
dc.description.abstractAn angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.
dc.description.sponsorshipThe Roma Tor Vergata group acknowledges the financial support of the European Office of Aerospace Research and Development (EOARD) through Air Force Office of Scientific Research Material Command, USAF, under Grant No. FA8655-11-1-3036.
dc.publisherAmerican Chemical Society (ACS)
dc.titleDirect evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalThe Journal of Physical Chemistry C
dc.contributor.institutionInterdisciplinary Laboratories for Advanced Materials Physics (I-LAMP), Dipartimento di Matematica e Fisica, Università Cattolica Del Sacro Cuore, I-25121 Brescia, Italy
dc.contributor.institutionUnità CNISM, Dipartimento di Fisica, Università di Roma Tor Vergata, I-00133 Roma, Italy
kaust.personDel Gobbo, Silvano
dc.date.published-online2013-08-29
dc.date.published-print2013-09-12


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