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    UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

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    1.4930005.pdf
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    Type
    Article
    Authors
    Ziani, Ahmed cc
    Harb, Moussab cc
    Noureldine, Dalal cc
    Takanabe, Kazuhiro cc
    KAUST Department
    Catalysis for Energy Conversion (CatEC)
    Chemical Science Program
    KAUST Catalysis Center (KCC)
    Physical Science and Engineering (PSE) Division
    Date
    2015-09-03
    Online Publication Date
    2015-09-03
    Print Publication Date
    2015-09
    Permanent link to this record
    http://hdl.handle.net/10754/576972
    
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    Abstract
    We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.
    Citation
    UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study 2015, 3 (9):096101 APL Materials
    Publisher
    AIP Publishing
    Journal
    APL Materials
    DOI
    10.1063/1.4930005
    Additional Links
    http://scitation.aip.org/content/aip/journal/aplmater/3/9/10.1063/1.4930005
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4930005
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Chemical Science Program; KAUST Catalysis Center (KCC)

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