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dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorWang, Qingxiao
dc.contributor.authorMelnikov, Vasily
dc.contributor.authorMohammed, Omar F.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-24T08:34:53Z
dc.date.available2015-08-24T08:34:53Z
dc.date.issued2015-02-23
dc.identifier.citationHota, M. K., Hedhili, M. N., Wang, Q., Melnikov, V. A., Mohammed, O. F., & Alshareef, H. N. (2015). Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers. Advanced Electronic Materials, 1(3), 1400035. doi:10.1002/aelm.201400035
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.201400035
dc.identifier.urihttp://hdl.handle.net/10754/575643
dc.description.abstractReproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.
dc.publisherWiley
dc.titleNanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentCore Labs
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentUltrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
dc.identifier.journalAdvanced Electronic Materials
kaust.personWang, Qingxiao
kaust.personAlshareef, Husam N.
kaust.personHota, Mrinal Kanti
kaust.personHedhili, Mohamed N.
kaust.personMelnikov, Vasily
kaust.personMohammed, Omar F.
dc.date.published-online2015-02-23
dc.date.published-print2015-03


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