Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers
AuthorsHota, Mrinal Kanti
Hedhili, Mohamed N.
Mohammed, Omar F.
Alshareef, Husam N.
KAUST DepartmentChemical Science Program
Functional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
KAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
Online Publication Date2015-02-23
Print Publication Date2015-03
Permanent link to this recordhttp://hdl.handle.net/10754/575643
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AbstractReproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.
CitationHota, M. K., Hedhili, M. N., Wang, Q., Melnikov, V. A., Mohammed, O. F., & Alshareef, H. N. (2015). Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers. Advanced Electronic Materials, 1(3), 1400035. doi:10.1002/aelm.201400035
JournalAdvanced Electronic Materials