Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers
Type
ArticleAuthors
Hota, Mrinal Kanti
Hedhili, Mohamed N.

Wang, Qingxiao
Melnikov, Vasily
Mohammed, Omar F.

Alshareef, Husam N.

KAUST Department
Chemical Science ProgramCore Labs
Electron Microscopy
Functional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
KAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
Date
2015-02-23Online Publication Date
2015-02-23Print Publication Date
2015-03Permanent link to this record
http://hdl.handle.net/10754/575643
Metadata
Show full item recordAbstract
Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.Publisher
WileyJournal
Advanced Electronic Materialsae974a485f413a2113503eed53cd6c53
10.1002/aelm.201400035