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    Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

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    Type
    Article
    Authors
    Hota, Mrinal Kanti cc
    Hedhili, Mohamed N. cc
    Wang, Qingxiao
    Melnikov, Vasily
    Mohammed, Omar F. cc
    Alshareef, Husam N. cc
    KAUST Department
    Chemical Science Program
    Core Labs
    Electron Microscopy
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
    Date
    2015-02-23
    Online Publication Date
    2015-02-23
    Print Publication Date
    2015-03
    Permanent link to this record
    http://hdl.handle.net/10754/575643
    
    Metadata
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    Abstract
    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.
    Citation
    Hota, M. K., Hedhili, M. N., Wang, Q., Melnikov, V. A., Mohammed, O. F., & Alshareef, H. N. (2015). Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers. Advanced Electronic Materials, 1(3), 1400035. doi:10.1002/aelm.201400035
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.201400035
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.201400035
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Chemical Science Program; Material Science and Engineering Program; KAUST Solar Center (KSC)

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