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dc.contributor.authorChen, Shanliang
dc.contributor.authorYing, Pengzhan
dc.contributor.authorWang, Lin
dc.contributor.authorWei, Guodong
dc.contributor.authorGao, Fengmei
dc.contributor.authorZheng, Jinju
dc.contributor.authorShang, Minhui
dc.contributor.authorYang, Zuobao
dc.contributor.authorYang, Weiyou
dc.contributor.authorWu, Tao
dc.date.accessioned2015-08-24T08:34:45Z
dc.date.available2015-08-24T08:34:45Z
dc.date.issued2015-01-23
dc.identifier.citationChen, S., Ying, P., Wang, L., Wei, G., Gao, F., Zheng, J., … Wu, T. (2015). Highly flexible and robust N-doped SiC nanoneedle field emitters. NPG Asia Materials, 7(1), e157–e157. doi:10.1038/am.2014.126
dc.identifier.issn18844049
dc.identifier.doi10.1038/am.2014.126
dc.identifier.urihttp://hdl.handle.net/10754/575637
dc.description.abstractFlexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.
dc.description.sponsorshipResearch reported in this publication was financially supported by the 973 program (Grant no. 2012CB326407) and the National Natural Science Foundation of China (NSFC, Grant nos. 51372122 and 51372123). This work was also supported by the King Abdullah University of Science and Technology (KAUST).
dc.publisherSpringer Nature
dc.relation.urlhttps://www.nature.com/articles/am2014126.pdf
dc.rightsArchived with thanks to Springer Science and Business Media LLC
dc.rightsThis file is an open access version redistributed from: https://www.nature.com/articles/am2014126.pdf
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0
dc.titleHighly flexible and robust N-doped SiC nanoneedle field emitters
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNPG Asia Materials
dc.eprint.versionPre-print
dc.contributor.institutionInstitute of Materials, Ningbo University of TechnologyNingbo, China
dc.contributor.institutionSchool of Material Science and Engineering, China University of Mining and TechnologyXuzhou, China
kaust.personWu, Tao
refterms.dateFOA2020-06-24T13:52:59Z
dc.date.published-online2015-01-23
dc.date.published-print2015-01


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