Show simple item record

dc.contributor.authorAl-Jawhari, Hala A.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorHedhili, Mohamed N.
dc.date.accessioned2015-08-24T08:34:23Z
dc.date.available2015-08-24T08:34:23Z
dc.date.issued2014-11-11
dc.identifier.issn03615235
dc.identifier.doi10.1007/s11664-014-3504-8
dc.identifier.urihttp://hdl.handle.net/10754/575621
dc.description.abstractThe effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.
dc.publisherSpringer Nature
dc.subjectcuprous oxide
dc.subjectp-Type TFTs
dc.subjecttin monoxide
dc.subjecttransparent bilayer channel
dc.titleControlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentCore Labs
dc.identifier.journalJournal of Electronic Materials
dc.contributor.institutionDepartment of Physics, King Abdulaziz UniversityJeddah, Saudi Arabia
kaust.personHedhili, Mohamed N.
kaust.personCaraveo-Frescas, Jesus Alfonso


This item appears in the following Collection(s)

Show simple item record