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    Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

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    Type
    Article
    Authors
    Al-Jawhari, Hala A.
    Caraveo-Frescas, Jesus Alfonso
    Hedhili, Mohamed N. cc
    KAUST Department
    Core Labs
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2014-11-11
    Online Publication Date
    2014-11-11
    Print Publication Date
    2015-01
    Permanent link to this record
    http://hdl.handle.net/10754/575621
    
    Metadata
    Show full item record
    Abstract
    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.
    Citation
    Al-Jawhari, H. A., Caraveo-Frescas, J. A., & Hedhili, M. N. (2014). Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer. Journal of Electronic Materials, 44(1), 117–120. doi:10.1007/s11664-014-3504-8
    Publisher
    Springer Nature
    Journal
    Journal of Electronic Materials
    DOI
    10.1007/s11664-014-3504-8
    ae974a485f413a2113503eed53cd6c53
    10.1007/s11664-014-3504-8
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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