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dc.contributor.authorXiong, Ka
dc.contributor.authorWang, Weichao
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorGupta, Rahul P.
dc.contributor.authorWhite, John B.
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorCho, Kyeongjae
dc.date.accessioned2015-08-24T08:32:15Z
dc.date.available2015-08-24T08:32:15Z
dc.date.issued2010-03-04
dc.identifier.issn00223727
dc.identifier.doi10.1088/0022-3727/43/11/115303
dc.identifier.urihttp://hdl.handle.net/10754/575538
dc.description.abstractWe investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.
dc.description.sponsorshipThis work is supported by the II-VI Foundation, a private foundation. The authors thank Dr Jeff Sharp for useful suggestions.
dc.publisherIOP Publishing
dc.titleElectronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalJournal of Physics D: Applied Physics
dc.contributor.institutionMaterials Science and Engineering Department, University of Texas at Dallas, Richardson, TX 75080, United States
dc.contributor.institutionMarlow Industries, 10451 Vista Park Road, Dallas, TX 75238, United States
dc.contributor.institutionPhysics Department, University of Texas at Dallas, Richardson, TX 75080, United States
kaust.personAlshareef, Husam N.


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