Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers
AuthorsAlhashim, Hala H.
Khan, Mohammed Zahed Mustafa
Majid, Mohammed Abdul
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Materials Science and Engineering Program
Online Publication Date2015-08-15
Print Publication Date2015-09-03
Permanent link to this recordhttp://hdl.handle.net/10754/567062
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AbstractImpurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
CitationSub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics Letters