Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers
Type
ArticleAuthors
Alhashim, Hala H.
Khan, Mohammed Zahed Mustafa

Majid, Mohammed Abdul

Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Materials Science and Engineering Program
Photonics Laboratory
Date
2015-08-15Online Publication Date
2015-08-15Print Publication Date
2015-09-03Permanent link to this record
http://hdl.handle.net/10754/567062
Metadata
Show full item recordAbstract
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.Citation
Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics LettersJournal
Electronics Lettersae974a485f413a2113503eed53cd6c53
10.1049/el.2015.1803