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    Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

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    EL.2015.1803.pdf
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    Type
    Article
    Authors
    Alhashim, Hala H. cc
    Khan, Mohammed Zahed Mustafa cc
    Majid, Mohammed Abdul cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Materials Science and Engineering Program
    Photonics Laboratory
    Date
    2015-08-15
    Online Publication Date
    2015-08-15
    Print Publication Date
    2015-09-03
    Permanent link to this record
    http://hdl.handle.net/10754/567062
    
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    Abstract
    Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
    Citation
    Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics Letters
    Publisher
    Institution of Engineering and Technology (IET)
    Journal
    Electronics Letters
    DOI
    10.1049/el.2015.1803
    Additional Links
    http://digital-library.theiet.org/content/journals/10.1049/el.2015.1803
    ae974a485f413a2113503eed53cd6c53
    10.1049/el.2015.1803
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; Material Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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