Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers
AuthorsAlhashim, Hala H.
Khan, Mohammed Zahed Mustafa
Majid, Mohammed Abdul
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
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AbstractImpurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
CitationSub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics Letters