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dc.contributor.authorLin, Yu-Chuan
dc.contributor.authorGhosh, Ram Krishna
dc.contributor.authorAddou, Rafik
dc.contributor.authorLu, Ning
dc.contributor.authorEichfeld, Sarah M.
dc.contributor.authorZhu, Hui
dc.contributor.authorLi, Ming-yang
dc.contributor.authorPeng, Xin
dc.contributor.authorKim, Moon J.
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorWallace, Robert M.
dc.contributor.authorDatta, Suman
dc.contributor.authorRobinson, Joshua A.
dc.date.accessioned2015-08-11T10:09:53Z
dc.date.available2015-08-11T10:09:53Z
dc.date.issued2015-06-19
dc.identifier.citationAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures 2015, 6:7311 Nature Communications
dc.identifier.issn2041-1723
dc.identifier.pmid26088295
dc.identifier.doi10.1038/ncomms8311
dc.identifier.urihttp://hdl.handle.net/10754/565817
dc.description.abstractVertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
dc.language.isoen
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms8311
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.titleAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
dc.contributor.institutionDepartment of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxivid1503.05592
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-13T12:58:31Z
dc.date.published-online2015-06-19
dc.date.published-print2015-12


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