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    Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

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    Type
    Article
    Authors
    Lin, Yu-Chuan cc
    Ghosh, Ram Krishna
    Addou, Rafik
    Lu, Ning
    Eichfeld, Sarah M.
    Zhu, Hui
    Li, Ming-yang cc
    Peng, Xin
    Kim, Moon J.
    Li, Lain-Jong cc
    Wallace, Robert M.
    Datta, Suman
    Robinson, Joshua A.
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2015-06-19
    Online Publication Date
    2015-06-19
    Print Publication Date
    2015-12
    Permanent link to this record
    http://hdl.handle.net/10754/565817
    
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    Abstract
    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
    Citation
    Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures 2015, 6:7311 Nature Communications
    Publisher
    Springer Nature
    Journal
    Nature Communications
    DOI
    10.1038/ncomms8311
    PubMed ID
    26088295
    arXiv
    1503.05592
    Additional Links
    http://www.nature.com/doifinder/10.1038/ncomms8311
    ae974a485f413a2113503eed53cd6c53
    10.1038/ncomms8311
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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