Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Type
ArticleAuthors
Lin, Yu-Chuan
Ghosh, Ram Krishna
Addou, Rafik
Lu, Ning
Eichfeld, Sarah M.
Zhu, Hui
Li, Ming-yang

Peng, Xin
Kim, Moon J.
Li, Lain-Jong

Wallace, Robert M.
Datta, Suman
Robinson, Joshua A.
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2015-06-19Online Publication Date
2015-06-19Print Publication Date
2015-12Permanent link to this record
http://hdl.handle.net/10754/565817
Metadata
Show full item recordAbstract
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.Citation
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures 2015, 6:7311 Nature CommunicationsPublisher
Springer NatureJournal
Nature CommunicationsPubMed ID
26088295arXiv
1503.05592Additional Links
http://www.nature.com/doifinder/10.1038/ncomms8311ae974a485f413a2113503eed53cd6c53
10.1038/ncomms8311
Scopus Count
Related articles
- Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.
- Authors: Azizi A, Eichfeld S, Geschwind G, Zhang K, Jiang B, Mukherjee D, Hossain L, Piasecki AF, Kabius B, Robinson JA, Alem N
- Issue date: 2015 May 26
- Chemically synthesized heterostructures of two-dimensional molybdenum/tungsten-based dichalcogenides with vertically aligned layers.
- Authors: Jung Y, Shen J, Sun Y, Cha JJ
- Issue date: 2014 Sep 23
- WSe₂ Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature.
- Authors: Withers F, Del Pozo-Zamudio O, Schwarz S, Dufferwiel S, Walker PM, Godde T, Rooney AP, Gholinia A, Woods CR, Blake P, Haigh SJ, Watanabe K, Taniguchi T, Aleiner IL, Geim AK, Fal'ko VI, Tartakovskii AI, Novoselov KS
- Issue date: 2015 Dec 9
- Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors.
- Authors: Wang Y, Kim JC, Wu RJ, Martinez J, Song X, Yang J, Zhao F, Mkhoyan A, Jeong HY, Chhowalla M
- Issue date: 2019 Apr
- Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures.
- Authors: Pierucci D, Henck H, Naylor CH, Sediri H, Lhuillier E, Balan A, Rault JE, Dappe YJ, Bertran F, Fèvre PL, Johnson ATC, Ouerghi A
- Issue date: 2016 Jun 1