Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells
KAUST DepartmentElectrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Materials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/565019
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AbstractIntermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
Conference/Event name2015 IEEE 8th GCC Conference and Exhibition, GCCCE 2015