CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)
AuthorsGhoneim, Mohamed T.
Rojas, Jhonathan Prieto
Kutbee, Arwa T.
Hussain, Muhammad Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Materials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/565010
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AbstractToday's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.
CitationGhoneim, M., Rojas, J., Kutbee, A., Hanna, A., & Hussain, M. (2014). CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100). 8th International Conference on Electrical and Computer Engineering. doi:10.1109/icece.2014.7026822
Conference/Event name8th International Conference on Electrical and Computer Engineering, ICECE 2014