CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)
Type
Conference PaperAuthors
Ghoneim, Mohamed T.
Rojas, Jhonathan Prieto

Kutbee, Arwa T.

Hanna, Amir

Hussain, Muhammad Mustafa

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Materials Science and Engineering Program
Date
2014-12Permanent link to this record
http://hdl.handle.net/10754/565010
Metadata
Show full item recordAbstract
Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.Citation
Ghoneim, M., Rojas, J., Kutbee, A., Hanna, A., & Hussain, M. (2014). CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100). 8th International Conference on Electrical and Computer Engineering. doi:10.1109/icece.2014.7026822Conference/Event name
8th International Conference on Electrical and Computer Engineering, ICECE 2014ISBN
9781479941667ae974a485f413a2113503eed53cd6c53
10.1109/ICECE.2014.7026822