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dc.contributor.authorNour, Maha A.
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorDroopad, Ravi
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-04T07:26:40Z
dc.date.available2015-08-04T07:26:40Z
dc.date.issued2014-08
dc.identifier.isbn9781479956227
dc.identifier.doi10.1109/NANO.2014.6968018
dc.identifier.urihttp://hdl.handle.net/10754/564971
dc.description.abstractFlexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleCMOS compatible route for GaAs based large scale flexible and transparent electronics
dc.typeConference Paper
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journal14th IEEE International Conference on Nanotechnology
dc.conference.date18 August 2014 through 21 August 2014
dc.conference.name2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
dc.contributor.institutionDepartment of Physics, Texas State UniversitySan Marcos, TX, United States
kaust.personNour, Maha A.
kaust.personGhoneim, Mohamed T.
kaust.personHussain, Muhammad Mustafa


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