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dc.contributor.authorZidan, Mohammed A.
dc.contributor.authorSalem, Ahmed Sultan
dc.contributor.authorFahmy, Hossam Aly Hassan
dc.contributor.authorSalama, Khaled N.
dc.date.accessioned2015-08-04T07:26:00Z
dc.date.available2015-08-04T07:26:00Z
dc.date.issued2014-07
dc.identifier.isbn9781479964680
dc.identifier.issn21650160
dc.identifier.doi10.1109/CNNA.2014.6888635
dc.identifier.urihttp://hdl.handle.net/10754/564948
dc.description.abstractCrossbar memristor arrays provide a promising high density alternative for the current memory and storage technologies. These arrays suffer from parasitic current components that significantly increase the power consumption, and could ruin the readout operation. In this work we study the trade-off between the crossbar array density and the power consumption required for its readout. Our analysis is based on simulating full memristor arrays on a SPICE platform.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectcrossbar
dc.subjectMemory
dc.subjectMemristor
dc.titleLeakage analysis of crossbar memristor arrays
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentSensors Lab
dc.identifier.journal2014 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA)
dc.conference.date29 July 2014 through 31 July 2014
dc.conference.name2014 14th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2014
dc.contributor.institutionFaculty of Engineering, Cairo UniversityGiza, Egypt
kaust.personZidan, Mohammed A.
kaust.personSalama, Khaled N.
kaust.personSalem, Ahmed Sultan


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