On the low SNR capacity of MIMO fading channels with imperfect channel state information
Type
Conference Paper
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Communication Theory Lab
Date
2014-05Metadata
Show full item recordAbstract
The capacity of Multiple Input Multiple Output (MIMO) Rayleigh fading channels with full knowledge of channel state information (CSI) at both the transmitter and the receiver (CSI-TR) has been shown recently to scale at low Signal-to-Noise Ratio (SNR) essentially as SNR log(1=SNR), independently of the number of transmit and receive antennas. In this paper, we investigate the ergodic capacity of MIMO Rayleigh fading channel with estimated channel state information at the transmitter (CSI-T) and possibly imperfect channel state information at the receiver (CSI-R). Our framework can be seen as a generalization of previous works as it can capture the perfect CSI-TR as a special case when the estimation error variance goes to zero. In our work, we mainly focus on the low SNR regime and we show that the capacity scales as (1-α) SNR log(1=SNR), where α is the estimation error variance. This characterization shows the loss of performance due to error estimation over the perfect channel state information at both the transmitter and the receiver. As a by-product of our new analysis, we show that our framework can also be extended to characterize the capacity of MIMO Rician fading channels at low SNR with possibly imperfect CSI-T and CSI-R. © 2014 IFIP.Conference/Event name
2014 12th International Symposium on Modeling and Optimization in Mobile, Ad Hoc, and Wireless Networks, WiOpt 2014ISBN
9783901882630Handle URI
http://hdl.handle.net/10754/564915Scopus Count
Related items
Showing items related by title, author, creator and subject.
-
On the low SNR capacity of MIMO fading channels with imperfect channel state information(Institute of Electrical and Electronics Engineers (IEEE), 2014-06)The capacity of multiple-input multiple-output (MIMO) Rayleigh fading channels with full knowledge of channel state information (CSI) at both the transmitter and the receiver (CSI-TR) has been shown recently to scale at low signal-to-noise ratio (SNR) essentially as SNR log(1/SNR), independently of the number of transmit and receive antennas. In this paper, we investigate the ergodic capacity of MIMO Rayleigh fading channel with estimated channel state information at the transmitter (CSI-T) and possibly imperfect channel state information at the receiver (CSI-R). Our framework can be seen as a generalization of previous works as it can capture the perfect CSI-TR as a special case when the estimation error variance goes to zero. In this paper, we mainly focus on the low SNR regime, and we show that the capacity scales as (1-α) SNR log(1/SNR), where α is the estimation error variance. This characterization shows the loss of performance due to error estimation over the perfect channel state information at both the transmitter and the receiver. As a by-product of our new analysis, we show that our framework can be also extended to characterize the capacity of MIMO Rician fading channels at low SNR with possibly imperfect CSI-T and CSI-R. © 1972-2012 IEEE.
-
Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs(AIP Publishing, 2016-12-29)We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
-
On the computation of the higher-order statistics of the channel capacity over generalized fading channels(Institute of Electrical and Electronics Engineers (IEEE), 2012-12)The higher-order statistics (HOS) of the channel capacity μn=E[logn (1+γ end)], where n ∈ N denotes the order of the statistics, has received relatively little attention in the literature, due in part to the intractability of its analysis. In this letter, we propose a novel and unified analysis, which is based on the moment generating function (MGF) technique, to exactly compute the HOS of the channel capacity. More precisely, our mathematical formalism can be readily applied to maximal-ratio-combining (MRC) receivers operating in generalized fading environments. The mathematical formalism is illustrated by some numerical examples focusing on the correlated generalized fading environments. © 2012 IEEE.
