Tin (Sn) for enhancing performance in silicon CMOS

Type
Conference Paper
Authors
Hussain, Aftab M. cc
Fahad, Hossain M.
Singh, Nirpendra cc
Sevilla, Galo T. cc
Schwingenschlögl, Udo cc
Hussain, Muhammad Mustafa cc
KAUST Department
Electrical Engineering Program
Integrated Nanotechnology Lab
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Computational Physics and Materials Science (CPMS)
Date
2013-10

Metadata
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Abstract
We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)
Conference/Event name
2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
ISBN
9781479933877
DOI
10.1109/NMDC.2013.6707470
Handle URI
http://hdl.handle.net/10754/564809
Collections
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division