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    Tin (Sn) for enhancing performance in silicon CMOS

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    Type
    Conference Paper
    Authors
    Hussain, Aftab M. cc
    Fahad, Hossain M.
    Singh, Nirpendra cc
    Sevilla, Galo T. cc
    Schwingenschlögl, Udo cc
    Hussain, Muhammad Mustafa cc
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Integrated Nanotechnology Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-10
    Permanent link to this record
    http://hdl.handle.net/10754/564809
    
    Metadata
    Show full item record
    Abstract
    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.
    Citation
    Hussain, A. M., Fahad, H. M., Singh, N., Torres Sevilla, G. A., Schwingenschlogl, U., & Hussain, M. M. (2013). Tin (Sn) for enhancing performance in silicon CMOS. 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC). doi:10.1109/nmdc.2013.6707470
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)
    Conference/Event name
    2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
    ISBN
    9781479933877
    DOI
    10.1109/NMDC.2013.6707470
    ae974a485f413a2113503eed53cd6c53
    10.1109/NMDC.2013.6707470
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Integrated Nanotechnology Lab; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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