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dc.contributor.authorQaisi, Ramy M.
dc.contributor.authorSmith, Casey
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-04T07:12:50Z
dc.date.available2015-08-04T07:12:50Z
dc.date.issued2013-04
dc.identifier.isbn9781467361958
dc.identifier.doi10.1109/SIECPC.2013.6550799
dc.identifier.urihttp://hdl.handle.net/10754/564696
dc.description.abstractGraphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectatmospheric pressure chemical vapor deposition (APCVD)
dc.subjectgraphene
dc.subjectRaman spectroscopy
dc.titleTime variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene
dc.typeConference Paper
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journal2013 Saudi International Electronics, Communications and Photonics Conference
dc.conference.date27 April 2013 through 30 April 2013
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
dc.conference.locationRiyadh
kaust.personQaisi, Ramy M.
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa


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